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We also develop electronic materials apt for these technologies; for instance, semiconductors with controllable defect levels for the Resistive random access memory (Re RAM) technology, ultra-thin high-k dielectrics and high-mobility semiconductors for TFT's and novel absorber layers for thin film solar cells.
We attempt to understand the materials from its molecular electronic structures to know their charge transport properties in various device configurations.
The set of materials in our current focus includes reduced graphene oxide (r GO) and r GO-based hybrid nanomaterials, doped Zn O, liquid crystals and perovskite materials.We mostly follow technology compatible thin film deposition methods.Besides the material characterization techniques, we employ Scanning Tunneling Microscope (STM) together with tunneling spectroscopy (STS) to understand the electronic mapping and local density of states (LDOS) of materials.Density functional theory (DFT) calculations are used to understand what we see in STM, and to modify the materials further.The research areas we are focusing are given below.The aggressive scaling down of the dimensions of the CMOS devices indicates that within this decade, further miniaturization of the memory elements, especially the Flash technology, will meet challenges at various levels due to the direct quantum tunneling of the stored charges and consequent data loss.